Gaa Mosfet



Gaa MosfetMosfetGaa mosfet board

Apple giftcard for mac book air blackfriday. Gate-all-around (GAA) or nanowire MOSFETs have been regarded as a promising technology for sub-10-nm CMOS devices, because of their good gate control capability over the channel 1. As the fully-depleted gate-all-around (GAA) MOSFET’s natural length 2 is shorter than the double-gate (DG) MOSFET’s 3, GAA. The design of gate-all-around (GAA) MOSFETs was optimized and compared with that of double-gate MOSFETs. We discussed the optimal ratio of the fin width to the gate length and investigated.

Gaa mosfet codeGaa Mosfet

Gaa Mosfet Standards

  1. J.P. Colinge, Multiple-gate SOI MOSFETs. Solid-State Electron. 48, 875 (2004)CrossRefGoogle Scholar
  2. N. Singh, K.D. Buddharaju, S.K. Manhas, A. Agarwal, S.C. Rustagi, G.Q. Lo, N. Balasubramanian, D.L. Kwong, Si, SiGe nanowire devices by top–down technology and their applications. IEEE Trans. Electron Devices 55, 3107 (2008)Google Scholar
  3. K. Nayak, M. Bajaj, A. Konar, P.J. Oldiges, K. Natori, H. Iwai, K.V.R.M. Murali, V.R. Rao, CMOS logic device and circuit performance of si gate all around nanowire MOSFET. IEEE Trans. Electron Devices 61, 3066 (2014)CrossRefGoogle Scholar
  4. ITRS version 2.0 (2015), http://www.semiconductors.org/main/2015_international_technology_roadmap_for_semiconductors_itrs/
  5. M.S. Yeh, Y.J. Lee, M.F. Hung, K.C. Liu, Y.C. Wu, High-performance Gate-all-around poly-Si thin-film transistors by microwave annealing with NH3 plasma passivation. IEEE Trans. Nanotechnol. 12, 636 (2013)CrossRefGoogle Scholar
  6. H.B. Chen, C.Y. Chang, N.H. Lu, J.J. Wu, M.H. Han, Y.C. Cheng, Y.C. Wu, Characteristics of Gate-all-around junctionless poly-Si TFTs with an ultrathin channel. IEEE Electron Device Lett. 34, 897 (2013)CrossRefGoogle Scholar